Facilities

Scanning Thermal Microscopy System

Scanning Thermal Microscopy System (1/2)

Scanning Thermal Microscopy System (2/2)

Purpose: Nanofabrication and nanomanipulation, as well as measurement of surface topography, nanoscale temperature, and local thermomechanical properties of materials

Specifications: Repeatability of 3 nm in the z direction and 50 nm in the x and y directions; travel range of 10 mm × 10 mm

Temperature range: Room temperature to 300 °C

Lock-in Infrared Thermography System

Lock-in Infrared Thermography System (1/2)

Lock-in Infrared Thermography System (2/2)

Purpose: Measurement of three-dimensional anisotropic thermophysical properties of various free-standing thin films, and measurement of thermal contact resistance

Specifications: Cross-plane and in-plane thermal diffusivity range of 10⁻⁸ m²/s to 10⁻³ m²/s

Temperature range: 80–500 K

Thickness range: From the micrometer scale to 4000 μm

Thermoelectric Property Measurement System for Micro/Nano Wires

Thermoelectric Property Measurement System for Micro/Nano Wires (1/3)

Thermoelectric Property Measurement System for Micro/Nano Wires (2/3)

Thermoelectric Property Measurement System for Micro/Nano Wires (3/3)

Purpose: Measurement of thermoelectric properties of various fiber samples

Sample requirements: Diameter above 2 μm and length of approximately 5–20 mm; a cross-sectional morphology image of the sample (elliptical, flat, circular, etc.) should be provided for subsequent data processing

Temperature range: 80–320 K; the system can be extended up to 500 K (the extension module has not yet been purchased)

Thermal conductivity range: Thermal resistance per unit length of 10⁷–10¹¹ K·W⁻¹, corresponding to a thermal conductivity above 0.1 W/(m·K), preferably below 500 W/(m·K)

Sample conductivity: No requirement on electrical conductivity

Other Equipment

Hall Effect Measurement System

Hall Effect Measurement System (1/2)

Hall Effect Measurement System (2/2)

Purpose: Measurement of carrier concentration and mobility of thin films

Specifications: Central magnetic field of 2 T; temperature range of 80–500 K

  • Infrared thermal camera
  • Probe station
  • Film thickness gauge
  • Data logger